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Download Bias Temperature Instability for Devices and Circuits by Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.) PDF

By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)

This publication presents a single-source connection with one of many more difficult reliability concerns plaguing smooth semiconductor applied sciences, unfavourable bias temperature instability. Readers will take advantage of state-of-the paintings assurance of study in themes similar to time established illness spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon concept, compact modeling with RC ladders and implications on gadget reliability and lifetime.

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Extra resources for Bias Temperature Instability for Devices and Circuits

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The relative error for the linear extrapolation increases with increasing power supplied to the poly-heater. 4 Heating and Cooling Dynamics In this subsection we elaborate on the time-dependent heating and cooling dynamics of the device as a heating voltage/power is applied to or removed from the heater, respectively. The chuck (ambient) temperature was −60 ◦C during the following experiments. By applying a certain heating voltage to the poly-heater wires, the device temperature quickly elevates and stabilizes after a couple of seconds.

H. Stathis, A. Kerber and E. Cartier, “PBTI Relaxation Dynamics after AC vs. DC Stress in High-k/Metal Gate Stacks” inProc. IRPS, pp. 50–54, 2010. 25. L. III Tewksbury andHae-Seung Lee,“Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs”, IEEE Journal of Solid-State Circuits, 29, pp. 239–252, 1994. 26. Eduard Cartier, Rishikesh Krishnan, Andreas Kerber, Sandip De, Rajan Pandey, Takashi Ando, Marinus Hopstaken, Joseph F. , Michael D. Sullivan, Kota Murali, Vijay Naraianan and Michael P.

Perrier, Y. Rey-Tauriac, N. Revil, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s”, Technical Digest. International Electron Devices Meeting, (IEDM), pp. 109–112, 2004. 36. V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability Vol. 46, pp. 1–23, 2006. 37. Hans Reisinger, Ulrich Brunner, Wolfgang Heinrigs, Wolfgang Gustin, and Christian Schl¨under, “A Comparison of Fast Methods for Measuring NBTI Degradation”, IEEE Transactions on Device and Materials Reliability, vol.

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