By Andreas Kerber, Eduard Cartier (auth.), Tibor Grasser (eds.)
This publication presents a single-source connection with one of many more difficult reliability concerns plaguing smooth semiconductor applied sciences, unfavourable bias temperature instability. Readers will take advantage of state-of-the paintings assurance of study in themes similar to time established illness spectroscopy, anomalous illness habit, stochastic modeling with extra metastable states, multiphonon concept, compact modeling with RC ladders and implications on gadget reliability and lifetime.
Read or Download Bias Temperature Instability for Devices and Circuits PDF
Similar circuits books
As info processing strikes at a quick velocity to small transportable embedded units, the knowledge channels and endpoints want higher safeguard. safe built-in Circuits and structures presents the built-in circuits clothier and embedded process fashion designer with insights into the fundamentals of defense and cryptography wanted for such units from an implementation standpoint.
Neuromorphic digital engineering takes its proposal from the functioning of worried platforms to construct extra energy effective digital sensors and processors. Event-based neuromorphic platforms are encouraged through the brain's effective data-driven conversation layout, that's key to its speedy responses and memorable features.
The 1st encompassing treatise of this new and extremely vital box places the recognized actual obstacles for traditional second microelectronics into standpoint with the necessities for additional microelectronics advancements and marketplace must haves. This two-volume guide offers 3D strategies to the function density challenge, addressing all vital matters, resembling wafer processing, die bonding, packaging expertise, and thermal features.
Designed for an introductory electrical circuits direction, the second one version of Linear Circuit research offers authoritative and in-depth but hugely obtainable insurance of conventional linear circuit research topics--both innovations and computation. This moment variation represents an exhaustive revision, that includes: · whole integration and huge use of MATLAB® in fixing difficulties and examples · widespread use of SPICE, in particular with op amp circuits · Twenty percentage extra examples and various extra illustrations · nearly thrice as many workouts instantly following the examples · greater than one thousand end-of-chapter difficulties (approximately 25% greater than the 1st variation, categorised and graded from the easier to the extra complicated; this variation contains many new simple difficulties) · very good pedagogical parts together with case reviews, motivational real-world illustrations, and keywords and ideas A CD in every one booklet!
- Low-Voltage Low-Power Analog Integrated Circuits: A Special Issue of Analog Integrated Circuits and Signal Processing An International Journal Volume 8, No. 1 (1995)
- Advanced Data Converters
- Fundamentals of Global Positioning System Receivers: A Software Approach
- High-Ratio Voltage Conversion in CMOS for Efficient Mains-Connected Standby
Extra resources for Bias Temperature Instability for Devices and Circuits
The relative error for the linear extrapolation increases with increasing power supplied to the poly-heater. 4 Heating and Cooling Dynamics In this subsection we elaborate on the time-dependent heating and cooling dynamics of the device as a heating voltage/power is applied to or removed from the heater, respectively. The chuck (ambient) temperature was −60 ◦C during the following experiments. By applying a certain heating voltage to the poly-heater wires, the device temperature quickly elevates and stabilizes after a couple of seconds.
H. Stathis, A. Kerber and E. Cartier, “PBTI Relaxation Dynamics after AC vs. DC Stress in High-k/Metal Gate Stacks” inProc. IRPS, pp. 50–54, 2010. 25. L. III Tewksbury andHae-Seung Lee,“Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs”, IEEE Journal of Solid-State Circuits, 29, pp. 239–252, 1994. 26. Eduard Cartier, Rishikesh Krishnan, Andreas Kerber, Sandip De, Rajan Pandey, Takashi Ando, Marinus Hopstaken, Joseph F. , Michael D. Sullivan, Kota Murali, Vijay Naraianan and Michael P.
Perrier, Y. Rey-Tauriac, N. Revil, “On-the-fly characterization of NBTI in ultra-thin gate oxide PMOSFET’s”, Technical Digest. International Electron Devices Meeting, (IEDM), pp. 109–112, 2004. 36. V. Huard, M. Denais, C. Parthasarathy, “NBTI degradation: From physical mechanisms to modeling”, Microelectronics Reliability Vol. 46, pp. 1–23, 2006. 37. Hans Reisinger, Ulrich Brunner, Wolfgang Heinrigs, Wolfgang Gustin, and Christian Schl¨under, “A Comparison of Fast Methods for Measuring NBTI Degradation”, IEEE Transactions on Device and Materials Reliability, vol.