Circuits

Download CMOS Nanoelectronics: Innovative Devices, Architectures, and by Nadine Collaert PDF

By Nadine Collaert

This booklet covers probably the most vital machine architectures which have been greatly researched to increase the transistor scaling: FinFET. beginning with idea, the e-book discusses the benefits and the combination demanding situations of this equipment structure. It addresses intimately the themes equivalent to high-density fin patterning, gate stack layout, and source/drain engineering, which were thought of demanding situations for the mixing of FinFETs. The e-book additionally addresses circuit-related facets, together with the impression of variability on SRAM layout, ESD layout, and high-T operation. It discusses a brand new gadget inspiration: the junctionless nanowire FET.

Show description

Read Online or Download CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications PDF

Best circuits books

Secure integrated circuits and systems

As info processing strikes at a quick speed to small moveable embedded units, the knowledge channels and endpoints desire larger security. safe built-in Circuits and platforms presents the built-in circuits fashion designer and embedded method clothier with insights into the fundamentals of safeguard and cryptography wanted for such units from an implementation point of view.

Event-Based Neuromorphic Systems

Neuromorphic digital engineering takes its suggestion from the functioning of anxious platforms to construct extra strength effective digital sensors and processors. Event-based neuromorphic platforms are encouraged by means of the brain's effective data-driven conversation layout, that is key to its quickly responses and noteworthy services.

Handbook of 3D Integration: Volumes 1 and 2 - Technology and Applications of 3D Integrated Circuits

The 1st encompassing treatise of this new and intensely vital box places the recognized actual boundaries for traditional 2nd microelectronics into point of view with the necessities for extra microelectronics advancements and marketplace prerequisites. This two-volume instruction manual provides 3D ideas to the characteristic density challenge, addressing all vital matters, corresponding to wafer processing, die bonding, packaging know-how, and thermal facets.

Linear Circuit Analysis: Time Domain, Phasor, and Laplace Transform Approaches

Designed for an introductory electrical circuits path, the second one variation of Linear Circuit research offers authoritative and in-depth but hugely available assurance of conventional linear circuit research topics--both techniques and computation. This moment version represents an exhaustive revision, that includes: · entire integration and huge use of MATLAB® in fixing difficulties and examples · common use of SPICE, in particular with op amp circuits · Twenty percentage extra examples and diverse extra illustrations · nearly 3 times as many routines instantly following the examples · greater than a thousand end-of-chapter difficulties (approximately 25% greater than the 1st version, labeled and graded from the easier to the extra complicated; this version comprises many new uncomplicated difficulties) · first-class pedagogical parts together with case reports, motivational real-world illustrations, and key phrases and ideas A CD in every one publication!

Additional resources for CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications

Example text

The latter is especially important for bulk MuGFET. 10 shows the VT lin dependency on fin width and L GATE . In this case, the results are for SOI MuGFETs. For short (< 70 nm) gates, the WFIN dependency on VT lin is found to be surprisingly weak, while for longer gate lengths, a strong VT lin increase is observed, especially for narrow fins. This increase can be attributed to fin width fluctuations, as is confirmed by Monte Carlo simulations accounting for the quantum confinement. The largest impact on variability is seen for long gates and narrow fins.

44. , San K. , Jurczak M. , “Performance enhancement of MUGFET devices using super critical strained–SOI (SC-SSOI) and CESL” VLSI Tech. Symp, 52–53, 2006. 45. , Toyoda E. , “High performance multi-gate pMOSFET using uniaxially-strained SGOI channels,” IEDM Tech. Digest, 709–712, 2005. 46. , Jurczak M. , “Strain engineering in multi-gate devices,” SEMI Technology Symposium, Japan, December 2006. 01-Collaert-c01 July 26, 2012 16:7 PSP Book - 9in x 6in 01-Collaert-c01 References 47. , Jurczak M. 2 in the source and drain regions,” VLSI Tech.

Digest, 1–4, 2009. 65. Garnett E. , Brongersma M. , Cui Yi and McGehee M. , “Nanowire solar cells,” Ann. Rev. Mater. Res, 41, 269–295, 2011. 1 Introduction The FinFET architecture leads to a more complex plasma etching processing, especially for active fins with a critical dimension (CD) below 25 nm targeting straight profiles, needed for controlling the short channel effects (SCE) [1]. Patterning such silicon fins becomes more challenging when the structure density increases and the CD is scaled down to less than 15 nm.

Download PDF sample

Rated 4.95 of 5 – based on 24 votes