By Nadine Collaert
This booklet covers probably the most vital machine architectures which have been greatly researched to increase the transistor scaling: FinFET. beginning with idea, the e-book discusses the benefits and the combination demanding situations of this equipment structure. It addresses intimately the themes equivalent to high-density fin patterning, gate stack layout, and source/drain engineering, which were thought of demanding situations for the mixing of FinFETs. The e-book additionally addresses circuit-related facets, together with the impression of variability on SRAM layout, ESD layout, and high-T operation. It discusses a brand new gadget inspiration: the junctionless nanowire FET.
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Additional resources for CMOS Nanoelectronics: Innovative Devices, Architectures, and Applications
The latter is especially important for bulk MuGFET. 10 shows the VT lin dependency on ﬁn width and L GATE . In this case, the results are for SOI MuGFETs. For short (< 70 nm) gates, the WFIN dependency on VT lin is found to be surprisingly weak, while for longer gate lengths, a strong VT lin increase is observed, especially for narrow ﬁns. This increase can be attributed to ﬁn width ﬂuctuations, as is conﬁrmed by Monte Carlo simulations accounting for the quantum conﬁnement. The largest impact on variability is seen for long gates and narrow ﬁns.
44. , San K. , Jurczak M. , “Performance enhancement of MUGFET devices using super critical strained–SOI (SC-SSOI) and CESL” VLSI Tech. Symp, 52–53, 2006. 45. , Toyoda E. , “High performance multi-gate pMOSFET using uniaxially-strained SGOI channels,” IEDM Tech. Digest, 709–712, 2005. 46. , Jurczak M. , “Strain engineering in multi-gate devices,” SEMI Technology Symposium, Japan, December 2006. 01-Collaert-c01 July 26, 2012 16:7 PSP Book - 9in x 6in 01-Collaert-c01 References 47. , Jurczak M. 2 in the source and drain regions,” VLSI Tech.
Digest, 1–4, 2009. 65. Garnett E. , Brongersma M. , Cui Yi and McGehee M. , “Nanowire solar cells,” Ann. Rev. Mater. Res, 41, 269–295, 2011. 1 Introduction The FinFET architecture leads to a more complex plasma etching processing, especially for active ﬁns with a critical dimension (CD) below 25 nm targeting straight proﬁles, needed for controlling the short channel eﬀects (SCE) . Patterning such silicon ﬁns becomes more challenging when the structure density increases and the CD is scaled down to less than 15 nm.